Effect of Oxygen Concentration Ratio on a Ga2O3-Based Resistive Random Access Memory
نویسندگان
چکیده
منابع مشابه
Resistive Random Access Memory (RRAM)
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-theart RRAM device performances, characterization, and modeling techniques are summarized, and the design conside...
متن کاملResistive Random Access Memory (ReRAM): A Metal Oxide Memory Cell
We review the recent progress in the ReRAM technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. We first provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account ...
متن کاملConductance Quantization in Resistive Random Access Memory.
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optic...
متن کاملAnalysis on Resistive Random Access Memory (RRAM) 1S1R Array
Lorem ipsum dolor sit amet, consectetur adipiscing elit. Increasing dependence of the functionality and performance of computing system on the characteristics of the memory subsystem calls for further study on various memory technologies. Conventional memory technologies, such as SRAM, DRAM and FLASH, suffer from the formidable device scaling challenges, which makes researchers pay more attenti...
متن کاملResistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for nonvolatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. T...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Access
سال: 2019
ISSN: 2169-3536
DOI: 10.1109/access.2019.2948423